Item description for Topics in Growth and Device Processing of Iii-V Semiconductors (International Series on Advances in Solid State Electronics and Technology) by S. J. Pearton, C. R. Abernathy & F. Ren...
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
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Studio: World Scientific Publishing Company
Est. Packaging Dimensions: Length: 8.9" Width: 6.1" Height: 1.4" Weight: 1.9 lbs.
Publisher World Scientific Publishing Company
ISBN 9810218842 ISBN13 9789810218843
Availability 0 units. This item is restricted to one per order.
More About S. J. Pearton, C. R. Abernathy & F. Ren
Pearton, University of Florida, Gainesville, FL.
S. J. Pearton has an academic affiliation as follows - AT&T Bell Laboratories, New Jersey University of Florida AT&T Bell Lab.