Item description for Ferroelectric Random Access Memories: Fundamentals and Applications (Topics in Applied Physics) by Hiroshi Ishiwara...
In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it alsohelps specialists to understand FeRAMs more deeply.
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Est. Packaging Dimensions: Length: 9.3" Width: 6.1" Height: 0.9" Weight: 1.2 lbs.
Release Date May 27, 2004
ISBN 3540407189 ISBN13 9783540407188
Availability 85 units. Availability accurate as of Mar 25, 2017 07:52.
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